Beilstein J. Nanotechnol.2015,6, 893–900, doi:10.3762/bjnano.6.92
. GeO gas is formed at laser fluences higher than 20 mJ/cm2 and produces nanovoids in the laser-modified layer at the film surface. A glass transition at low temperatures could happen in the amorphous GeTiOfilm, which explains the formation of the wave-like topography. The very high Ge diffusivity
the formation of amorphous Ge nanoparticles through the segregation of Ge atoms in the GeTiO matrix. The nanostructuring effects induced by the laser irradiation can be used in functionalizing the surface of the films.
Keywords: fast diffusion; GeTiOfilm; nanostructuring; pulsed laser annealing
of the GeTiOfilm, after irradiation with 100 laser pulses with a fluence of 15 mJ/cm2. This periodicity is smaller than the 266 nm wavelength of the laser radiation. Figure 1 shows the SEM (Figure 1a) and AFM (Figure 1b) images of the irradiated surface area of the film.
Figure 2 shows low
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Figure 1:
Surface relief of the GeTiO film after laser irradiation with 100 laser pulses at 15 mJ/cm2 fluence...